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MBM29DL323BE - (MBM29DL32xTE/BE) FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT

This page provides the datasheet information for the MBM29DL323BE, a member of the MBM29DL32xTE (MBM29DL32xTE/BE) FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT family.

Description

The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each.

These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply.

12.0 V VPP and 5.0 V VCC are not required for write or erase operations.

Features

  • 0.23 µm Process Technology.
  • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL32XTE/BE Device Bank Divisions” in “s.

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Datasheet Details

Part number MBM29DL323BE
Manufacturer Fujitsu Media Devices
File Size 1.28 MB
Description (MBM29DL32xTE/BE) FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT
Datasheet download datasheet MBM29DL323BE Datasheet
Additional preview pages of the MBM29DL323BE datasheet.

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20881-7E FLASH MEMORY CMOS 32 M (4 M × 8/2 M × 16) BIT Dual Operation MBM29DL32XTE/BE80/90 s DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which are considered to be two separate memory arrays for operations.
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